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Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire

Identifieur interne : 00D942 ( Main/Repository ); précédent : 00D941; suivant : 00D943

Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire

Auteurs : RBID : Pascal:03-0059162

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Epitaxie jet moléculaire, Couche épitaxique, Puits quantique, Semiconducteur III-V, Aluminium nitrure, Gallium nitrure, Indium nitrure, Exciton, Cathodoluminescence, Couche mince, Microscopie électronique balayage, Microscope balayage, Microscopie force, InGaN, Ga In N, Substrat saphir, 7860H, 8115H, AlGaN, Al Ga N, GaN, Ga N.

English descriptors

KwdEn :
- Aluminium nitrides, Cathodoluminescence, Crystal growth from vapors, Epitaxial layers, Excitons, Experimental study, Force microscopy, Gallium nitrides, III-V semiconductors, Indium nitrides, Molecular beam epitaxy, Quantum wells, Scanning electron microscopy, Scanning microscope, Thin films.

Abstract

Al_0.1Ga_0.9N(5nm)/GaN(2nm) and In_0.2Ga_0.8N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which combines a scanning force microscope and a scanning electron microscope. The CL spectra show the characteristic band edge emission peak of GaN at λ = 364 nm and the emission peaks related to the presence of QWs, at λ = 353 and 430 nm for the AlGaN/GaN and the InGaN/GaN samples, respectively. Monochromatic CL images reveal that the emission of the AlGaN/GaN and InGaN/GaN QWs is localized at the level of the grains observed by SFM. A cross sectional analysis of the InGaN/GaN sample gives insight into its growth and an estimation of the exciton diffusion length of about L = 180 nm.

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Pascal:03-0059162

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire</title>
<author><name sortKey="Bubendorff, J L" uniqKey="Bubendorff J">J. L. Bubendorff</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Reims, UFR Sciences, UTAP-LMET, EA 2061, 21, Rue Clément Ader</s1>
<s2>51685 Reims</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Champagne-Ardenne</region>
<settlement type="city">Reims</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Grandjean, N" uniqKey="Grandjean N">N. Grandjean</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, rue Bernard Grégory</s1>
<s2>Sophia Antipolis, 06560 Valbonne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region>
<settlement type="city">Valbonne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Damilano, B" uniqKey="Damilano B">B. Damilano</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, rue Bernard Grégory</s1>
<s2>Sophia Antipolis, 06560 Valbonne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region>
<settlement type="city">Valbonne</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Troyon, M" uniqKey="Troyon M">M. Troyon</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Université de Reims, UFR Sciences, UTAP-LMET, EA 2061, 21, Rue Clément Ader</s1>
<s2>51685 Reims</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Champagne-Ardenne</region>
<settlement type="city">Reims</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0059162</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0059162 INIST</idno>
<idno type="RBID">Pascal:03-0059162</idno>
<idno type="wicri:Area/Main/Corpus">00DE73</idno>
<idno type="wicri:Area/Main/Repository">00D942</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitrides</term>
<term>Cathodoluminescence</term>
<term>Crystal growth from vapors</term>
<term>Epitaxial layers</term>
<term>Excitons</term>
<term>Experimental study</term>
<term>Force microscopy</term>
<term>Gallium nitrides</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Molecular beam epitaxy</term>
<term>Quantum wells</term>
<term>Scanning electron microscopy</term>
<term>Scanning microscope</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Epitaxie jet moléculaire</term>
<term>Couche épitaxique</term>
<term>Puits quantique</term>
<term>Semiconducteur III-V</term>
<term>Aluminium nitrure</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>Exciton</term>
<term>Cathodoluminescence</term>
<term>Couche mince</term>
<term>Microscopie électronique balayage</term>
<term>Microscope balayage</term>
<term>Microscopie force</term>
<term>InGaN</term>
<term>Ga In N</term>
<term>Substrat saphir</term>
<term>7860H</term>
<term>8115H</term>
<term>AlGaN</term>
<term>Al Ga N</term>
<term>GaN</term>
<term>Ga N</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Al<sub>0.1</sub>
Ga<sub>0.9</sub>
N(5nm)/GaN(2nm) and In<sub>0.2</sub>
Ga<sub>0.8</sub>
N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which combines a scanning force microscope and a scanning electron microscope. The CL spectra show the characteristic band edge emission peak of GaN at λ = 364 nm and the emission peaks related to the presence of QWs, at λ = 353 and 430 nm for the AlGaN/GaN and the InGaN/GaN samples, respectively. Monochromatic CL images reveal that the emission of the AlGaN/GaN and InGaN/GaN QWs is localized at the level of the grains observed by SFM. A cross sectional analysis of the InGaN/GaN sample gives insight into its growth and an estimation of the exciton diffusion length of about L = 180 nm.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>247</s2>
</fA05>
<fA06><s2>3-4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>BUBENDORFF (J. L.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GRANDJEAN (N.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>DAMILANO (B.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>TROYON (M.)</s1>
</fA11>
<fA14 i1="01"><s1>Université de Reims, UFR Sciences, UTAP-LMET, EA 2061, 21, Rue Clément Ader</s1>
<s2>51685 Reims</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, rue Bernard Grégory</s1>
<s2>Sophia Antipolis, 06560 Valbonne</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>284-290</s1>
</fA20>
<fA21><s1>2003</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000107148560090</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2003 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>17 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>03-0059162</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Al<sub>0.1</sub>
Ga<sub>0.9</sub>
N(5nm)/GaN(2nm) and In<sub>0.2</sub>
Ga<sub>0.8</sub>
N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which combines a scanning force microscope and a scanning electron microscope. The CL spectra show the characteristic band edge emission peak of GaN at λ = 364 nm and the emission peaks related to the presence of QWs, at λ = 353 and 430 nm for the AlGaN/GaN and the InGaN/GaN samples, respectively. Monochromatic CL images reveal that the emission of the AlGaN/GaN and InGaN/GaN QWs is localized at the level of the grains observed by SFM. A cross sectional analysis of the InGaN/GaN sample gives insight into its growth and an estimation of the exciton diffusion length of about L = 180 nm.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H60H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Couche épitaxique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Epitaxial layers</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Aluminium nitrure</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Aluminium nitrides</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium nitrure</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium nitrides</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Exciton</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Excitons</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Cathodoluminescence</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Cathodoluminescence</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Thin films</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Microscope balayage</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Scanning microscope</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Microscopio barrido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Microscopie force</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Force microscopy</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Microscopía fuerza</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Ga In N</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Substrat saphir</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7860H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8115H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>AlGaN</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Al Ga N</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Ga N</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>06</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>06</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Nitrure</s0>
<s2>NA</s2>
<s5>07</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Nitrides</s0>
<s2>NA</s2>
<s5>07</s5>
</fC07>
<fN21><s1>034</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire

Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri